发明名称 THICK FILM PASTE CONTAINING BISMUTH-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES
摘要 The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.
申请公布号 US2013092051(A1) 申请公布日期 2013.04.18
申请号 US201213438093 申请日期 2012.04.03
申请人 HANG KENNETH WARREN;E. I. DU PONT DE NEMOURS AND COMPANY 发明人 HANG KENNETH WARREN
分类号 C09D7/12 主分类号 C09D7/12
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