SEMICONDUCTOR DEVICE AND METHOD FOR PREPARING SAME

摘要

A semiconductor device and a method for preparing same. The semiconductor device includes: a substrate (101); a device region (102) located on the substrate (101); and at least one stress introduction area (103'') separated from the device region (102) via a separation structure (104), with a stress being introduced into at least a portion of the at least one stress introduction area (103''), and the stress introduced into the at least a portion of the at least one stress introduction area (103'') being generated by radiating by laser a non-crystallizing portion in the at least one stress introduction area (103'') to recrystallize the non-crystallizing portion. The semiconductor device generates a stress in a simpler manner and thereby improves the device performance.