| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device including a copper wiring, which requires no complicated processes and which is not likely to cause disconnection due to an occurrence of a micro-slit. <P>SOLUTION: A semiconductor device manufacturing method comprises: a process of preparing a structure in which a copper film is formed via a barrier film on an interlayer insulation film having a recess and formed on a substrate so as to fill the recess; a process of removing the copper film of the structure to a boundary with the barrier film by chemical mechanical polishing to form a Cu wiring in the recess; a process of recessing a surface of the Cu wiring from a surface of the interlayer insulation film by etching; and a process of removing the barrier film by chemical mechanical polishing. In the process of recessing the surface of the Cu wiring from the surface of the inter layer insulation film, the structure is arranged in a vacuum and organic compound atmosphere and oxygen gas cluster ion beams are irradiated on a surface including the surface of the copper wiring of the structure. As a result, the copper on the surface of the copper wiring is oxidized to generate a copper oxide by oxygen gas cluster ions contained in the oxygen gas cluster ion beams. The copper wiring is subjected to anisotropic etching by reacting the copper oxide with the organic compound. <P>COPYRIGHT: (C)2013,JPO&INPIT |
