| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist composition which is useful for EUV or for EB, and a method for forming a resist pattern by using the resist composition. <P>SOLUTION: The resist composition for EUV or EB includes a resin composition (C) having at least one kind selected from a fluorine atom and silicon atom, an aromatic group, and a polarity conversion group which is degraded by action of a base to increase its polarity; and a resin composition (A) (except for the resin composition (C)) which generates acid by exposure, and whose solubility to developer changes by the action of the acid. Content ratio of a constitutional unit having the aromatic group in the resin component (C) is 20 mol% or more. <P>COPYRIGHT: (C)2013,JPO&INPIT |
