| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for more accurately correcting dimensional variation occurring in a semiconductor manufacturing process. <P>SOLUTION: In an aspect of the present invention, a manufacturing method of a semiconductor device comprises the steps (S102 to S108) of calculating a correction amount for correcting a CD dimensional error using a pattern area contained in every square region in a plurality of square regions in a mesh form virtually divided from a pattern forming region of an exposure mask and the sum total length of outer peripheral sides of the pattern, the step (S202) of exposing a substrate applied with a resist film to the pattern with a corrected dimension using the correction amount, the step (S204) of developing the resist film after exposure, and the steps (S206 to S210) of processing the substrate using the resist pattern after development. <P>COPYRIGHT: (C)2013,JPO&INPIT |
