PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a photoresist composition with which a resist pattern having fewer development defects and good pattern features can be formed.

SOLUTION: The photoresist composition comprises: [A] a base polymer having a structural unit (I) containing an acid dissociable group; [B] a polymer having a structural unit (II) containing a base dissociable group and having a higher percentage of fluorine atom content than that of the polymer [A]; and [C] an acid generating compound. The polymer [A] has a weight average molecular weight in terms of polystyrene of 10,000 or more and 40,000 or less. It is suitable that the base dissociable group has a fluorine atom. It is more suitable that the base dissociable group is an aromatic hydrocarbon group. The structural unit (II) is suitably represented by the formula (2).

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