| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a vertical-structured semiconductor light-emitting device with a multi-layered light-emitting structure thin film. <P>SOLUTION: The vertical-structured semiconductor light-emitting device comprises: a multi-layered light-emitting structure comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer; a first bonding layer disposed under the multi-layered light-emitting structure; a second bonding layer disposed under the first bonding layer; and a heat sink layer disposed under the second bonding layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
