发明名称 |
LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
An LDMOS device may include at least one of a second conduction type buried layer and a first conduction type drain extension region. An LDMOS device may include a second conduction type drain extension region configured to be formed in a portion of the first conduction type drain extension region. The second conduction type drain extension region may include a gate pattern and a drain region. An LDMOS device may include a first conduction type body having surface contact with the second conduction type drain extension region and may include a source region. An LDMOS device may include a first guard ring formed around the second conduction type drain extension region. An LDMOS device may include a second guard ring configured to be formed around the first guard ring and configured to be connected to a different region of the second conduction type buried layer.
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申请公布号 |
US2013093016(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201213476207 |
申请日期 |
2012.05.21 |
申请人 |
KO CHOUL JOO;CHO CHEOL HO;DONGBU HITEK CO., LTD. |
发明人 |
KO CHOUL JOO;CHO CHEOL HO |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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