A MOS transistor formed in an active area of a semiconductor substrate and having a polysilicon gate doped according to a first conductivity type, the gate including two lateral regions of the second conductivity type.
申请公布号
US2013092987(A1)
申请公布日期
2013.04.18
申请号
US201213649972
申请日期
2012.10.11
申请人
STMICROELECTRONICS (ROUSSET) SAS;STMICROELECTRONICS (ROUSSET) SAS