Method for separating multi-component metal-organic semiconductor layers on substrate, involves enabling process gas total flow so that partial fluxes are introduced in process chamber to optimize lateral homogeneity on deposited layer

摘要

The method involves introducing a carrier gas and process gases from gas inlet zones (1-3) in a process chamber (6). The carrier gas is diffused as carrier gas stream (F) horizontally by process chamber and the process gas is diffused transverse along flux direction of carrier gas stream to a substrate (9). The total flow of the process gas is enabled such that several partial fluxes are introduced by gas inlet zone into the process chamber and the lateral homogeneity of the layer thickness and layer composition profile is optimized on deposited layer of the substrate. An independent claim is included for device for separating out two components existing layers on substrate.