发明名称 |
SEMICONDUCTOR DEVICE HAVING SCREENING ELECTRODE AND METHOD |
摘要 |
<p>PURPOSE: A semiconductor device having a screening electrode and its method are provided to prevent the deterioration of a breakdown voltage property and the increase in the capacitance of a gate to a drain. CONSTITUTION: An n-type region(17) is formed in the upper surface or the major surface(18) of a semiconductor region(11). A body region(31) is formed in a semiconductor layer(14). A current transfer region(33) is formed in the body region. A contact region(36) provides low contact resistance to the body region in the major surface. A first dielectric layer(41) is formed on or around the major surface. A conductive layer(46) is formed on a third dielectric layer(24) and a second dielectric layer(42).</p> |
申请公布号 |
KR20130038896(A) |
申请公布日期 |
2013.04.18 |
申请号 |
KR20130037703 |
申请日期 |
2013.04.05 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. |
发明人 |
LOECHELT GARY H.;ZDEBEL PETER J. |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|