发明名称 SEMICONDUCTOR DEVICE HAVING SCREENING ELECTRODE AND METHOD
摘要 <p>PURPOSE: A semiconductor device having a screening electrode and its method are provided to prevent the deterioration of a breakdown voltage property and the increase in the capacitance of a gate to a drain. CONSTITUTION: An n-type region(17) is formed in the upper surface or the major surface(18) of a semiconductor region(11). A body region(31) is formed in a semiconductor layer(14). A current transfer region(33) is formed in the body region. A contact region(36) provides low contact resistance to the body region in the major surface. A first dielectric layer(41) is formed on or around the major surface. A conductive layer(46) is formed on a third dielectric layer(24) and a second dielectric layer(42).</p>
申请公布号 KR20130038896(A) 申请公布日期 2013.04.18
申请号 KR20130037703 申请日期 2013.04.05
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES, L.L.C. 发明人 LOECHELT GARY H.;ZDEBEL PETER J.
分类号 H01L21/336;H01L29/78 主分类号 H01L21/336
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