| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide devices with increased performance by preventing unintentional impurity doping for HEMTs and other high speed switching devices. <P>SOLUTION: A semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body 213 has a continuously reduced impurity concentration where a higher impurity concentration at the bottom surface 211 is continuously reduced to a lower impurity concentration at the top surface 213. <P>COPYRIGHT: (C)2013,JPO&INPIT |
