| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a horizontal type IGBT capable of realizing reduction in on-voltage, assurance of breakdown resistance, and high-speed switching at the same time. <P>SOLUTION: By forming an n-type barrier layer 15 on an emitter side, the layer functions as a barrier of a hole, to prevent dropping of hole density when a hole injected from a collector side flows to a channel-p-well layer 6 on the emitter side. Thus, carrier density in an n<SP POS="POST">-</SP>type drift layer 2 near the emitter can be increased, thereby decreasing on-voltage. On the collector side, the portion contacting to a p<SP POS="POST">+</SP>type layer 4a in a collector electrode 12 acts as ohmic contact while the portion contacting to a p-type layer 4b acts as Schottky contact. At the portion acting as the Schottky contact, injection of holes from the collector side is suppressed to reduce accumulation carrier, thereby discouraging a parasitic bipolar transistor from turning on. As a result, a switching breakdown resistance can be assured while maintaining a low on-voltage. <P>COPYRIGHT: (C)2013,JPO&INPIT |
