发明名称 |
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma. |
申请公布号 |
US2013095669(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201213672282 |
申请日期 |
2012.11.08 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC.;HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
UEDA TATSUSHI;TERASAKI TADASHI;OGAWA UNRYU;HIRANO AKITO |
分类号 |
H01L21/02;C23C16/50;C23F1/00;C23F1/08 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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