| 摘要 |
<p>Provided is a method for producing a semiconductor device, the method allowing product yield to be further improved. In this method for producing a semiconductor device, firstly, a stopper layer (31) is formed over an insulating film (30) that has been formed on one surface of a semiconductor member in which a first semiconductor portion and a second semiconductor portion have been bonded together, the film having resistance such that the insulating film is not permeated by a predetermined chemical liquid when treated with the predetermined chemical liquid. Next, on the stopper layer (31) side of the semiconductor member, a Cu wiring joining portion (34) is formed for electrical connection of the first semiconductor portion and the second semiconductor portion. Next, a Cu diffusion prevention layer (33) is formed over the Cu wiring joining portion (34). Next, the area of the Cu diffusion prevention layer (33), except for the area where the Cu wiring joining portion (34) is formed, is removed, exposing unwanted Cu portions (210, 211) present in the area. Using the predetermined chemical liquid, the unwanted Cu portions (210, 211) are then removed.</p> |
