| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a solid state image sensor which can improve yield. <P>SOLUTION: The present invention relates to a manufacturing method for a solid state image sensor which includes a pixel electrode, a photoelectric conversion part having an organic film to generate charges in proportion to incident light, a transparent counter electrode, and an encapsulation layer which are all formed on a substrate. The manufacturing method comprises the steps of: sticking a metal mask fast by a magnetic force to a side face of the substrate on which the pixel electrode is disposed; evaporating organic matter on the side face of the substrate on which the pixel electrode is disposed, to form an organic film; removing the metal mask after an organic film is formed; forming a counter electrode on the organic film; and forming an encapsulation layer to cover the counter electrode. The metal mask has had half-etching applied thereto, and it is this half-etched side of the metal mask that is stuck fast to the pixel electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
