| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress variations in luminance of a light-emitting element caused by variations in threshold voltage of a transistor. <P>SOLUTION: A semiconductor device includes an n-channel type transistor, a light-emitting element, first wiring, a driver circuit having a function of controlling the potential of the first wiring, second wiring, a first switch, a second switch, a third switch, a fourth switch, a first capacitor, and a second capacitor. One of a source and a drain of the n-channel type transistor is connected to an anode of the light-emitting element. The driver circuit controls potential of the first wiring to have a period in which the potential of the first wiring is equal to or lower than the potential of a cathode of the light-emitting element. With this structure, voltage applied between the source and the gate of the n-channel type transistor can be corrected in anticipation of variations in threshold voltage, so that a drain current of the n-channel type transistor can be corrected, and the drain current can be supplied to the light-emitting element. <P>COPYRIGHT: (C)2013,JPO&INPIT |
