发明名称 THERMAL TREATMENT METHOD AND THERMAL TREATMENT APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a thermal treatment method and a thermal treatment apparatus which perform flash heating treatment while inhibiting adverse effects on a substrate. <P>SOLUTION: A semiconductor wafer W where a resist film is formed on a surface is carried into a chamber 6 of a thermal treatment apparatus 1 to be held by a holding plate 7. In a filter mechanism 2, a filter 20, which cuts light of a wavelength region at which the resist film is exposed, is inserted between a chamber window 61 of the chamber 6 and a flush lamp FL of a flush radiation part 5. When flush light emitted from the flash lamp FL penetrates into the filter 20, the light of the wavelength region is cut, and the flush light after the cut is radiated to a surface of the semiconductor wafer W. The radiation of the flush light in which the light of the wavelength region is cut enables necessary flush heating treatment to be performed while inhibiting the exposure of the resist film. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013069962(A) 申请公布日期 2013.04.18
申请号 JP20110208644 申请日期 2011.09.26
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KIYAMA HIROYOSHI;FUSE KAZUHIKO;KATO SHINICHI
分类号 H01L21/26;H01L21/027;H01L21/31;H01L21/316 主分类号 H01L21/26
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