| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable compound semiconductor device capable of surely inhibiting deterioration (chemical and physical change) in device properties in spite of a high voltage of an operating voltage and achieving a high withstanding voltage and a high output. <P>SOLUTION: The compound semiconductor device according to an embodiment comprises: a first protection film 6 composed of a homogeneous and same material (here, SiN) having a homogenous dielectric constant for covering a top face of a compound semiconductor layer 2; a protection part containing oxygen on one end part of an opening 6a of the first protection film 6, which is a second protection film 7a of an oxide film formed on the one end part to cover the one end part; and a gate electrode 8 in an overhang shape filling the opening 6a and embracing the second protection film 7a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
