| 发明名称 |
Method Of Manufacturing Gallium Nitride Film |
| 摘要 |
A method of manufacturing a gallium nitride (GaN) film in which defects in a GaN film that grows can be reduced. The method includes the step of growing a GaN nano-rod on a substrate, the nano-rod having a circumferential groove in an outer periphery thereof, and the step of growing a GaN film on the GaN nano-rod.
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| 申请公布号 |
US2013095641(A1) |
申请公布日期 |
2013.04.18 |
| 申请号 |
US201213649719 |
申请日期 |
2012.10.11 |
| 申请人 |
SAMSUNG CORNING PRECISION MATERIALS C., LTD.;SAMSUNG CORNING PRECISION MATERIALS CO., LTD. |
发明人 |
LIM SUNGKEUN;KIM JOON HOI;PARK BOIK;PARK CHEOLMIN;PARK HYUN JONG;BAE JUNYOUNG;SHIN SEONGHWAN;LEE WONJO;CHOI JUNSUNG;CHUNG BYUNGKYU |
| 分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
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