| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of obtaining a selective epitaxial layer containing Si and C and having a high substitution carbon concentration at high deposition speed, while maintaining a low process temperature of about 700°C or lower, preferably. <P>SOLUTION: The method of forming an epitaxial layer containing Si and C on a substrate includes the steps for: placing a substrate including a single crystal surface, an amorphous surface, a polycrystalline surface, and at least one second surface selected from the combination thereof in a process chamber; forming an Si:C epitaxial film doped with phosphorus in at least a part of the substrate by exposing the substrate to a silicon source, a carbon source, and a phosphorus source while maintaining the pressure in the process chamber at at least 300 Torr; and processing the substrate furthermore by exposing it to an etching gas containing HCl under a temperature in the process chamber of 700°C or lower. <P>COPYRIGHT: (C)2013,JPO&INPIT |
