| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for efficiently performing both selective epitaxy processes and AGS processes. <P>SOLUTION: A method of epitaxial film formation includes the steps of: pre-cleaning a substrate in a first processing chamber 108 utilizing a first gas prior to epitaxial film formation; transferring the substrate from the first processing chamber to a second processing chamber 110 through a transfer chamber 102 in a vacuum; and forming an epitaxial layer on the substrate in the second processing chamber 110 without utilizing the first gas; where the first gas is inappropriate for the use in the second processing chamber. <P>COPYRIGHT: (C)2013,JPO&INPIT |
