| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide of a thin film transistor which can achieve high mobility and which is excellent in stress resistance (less threshold voltage shift amount around stress application). <P>SOLUTION: A semiconductor layer oxide of a thin film transistor according to an embodiment contains at least one element (group X element) selected from Zn, Sn and In, and from a group X consisting of Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. <P>COPYRIGHT: (C)2013,JPO&INPIT |
