发明名称 |
VERTICAL TRANSISTOR HAVING AN ASYMMETRIC GATE |
摘要 |
A transistor structure is formed to include a substrate and, overlying the substrate, a source; a drain; and a channel disposed vertically between the source and the drain. The channel is coupled to a gate conductor that surrounds the channel via a layer of gate dielectric material that surrounds the channel. The gate conductor is composed of a first electrically conductive material having a first work function that surrounds a first portion of a length of the channel and a second electrically conductive material having a second work function that surrounds a second portion of the length of the channel. A method to fabricate the transistor structure is also disclosed. The transistor structure can be characterized as being a vertical field effect transistor having an asymmetric gate.
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申请公布号 |
US2013093000(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201113271812 |
申请日期 |
2011.10.12 |
申请人 |
GUO DECHAO;HAN SHU-JEN;WONG KEITH KWONG HON;YUAN JUN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GUO DECHAO;HAN SHU-JEN;WONG KEITH KWONG HON;YUAN JUN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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