发明名称 PROGRAMMABLE PHOTOLITHOGRAPHY
摘要 A method of programmable photolithography includes positioning (910) a programmable photomask in proximity to a photoresist layer on a sample. The programmable photomask is illuminated (920) with a plurality of different wavelengths of light simultaneously to expose the photoresist layer in a predetermined pattern. The programmable photomask is separated (930) from the photoresist layer and the photoresist layer is developed (940) to create the predetermined pattern in the photoresist layer.
申请公布号 WO2013056238(A2) 申请公布日期 2013.04.18
申请号 WO2012US60270 申请日期 2012.10.15
申请人 UNIVERSITY OF UTAH RESEARCH FOUNDATION 发明人 MENON, RAJESH
分类号 G03F7/26;G03F7/20;H01L21/027 主分类号 G03F7/26
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