发明名称 |
PROGRAMMABLE PHOTOLITHOGRAPHY |
摘要 |
A method of programmable photolithography includes positioning (910) a programmable photomask in proximity to a photoresist layer on a sample. The programmable photomask is illuminated (920) with a plurality of different wavelengths of light simultaneously to expose the photoresist layer in a predetermined pattern. The programmable photomask is separated (930) from the photoresist layer and the photoresist layer is developed (940) to create the predetermined pattern in the photoresist layer. |
申请公布号 |
WO2013056238(A2) |
申请公布日期 |
2013.04.18 |
申请号 |
WO2012US60270 |
申请日期 |
2012.10.15 |
申请人 |
UNIVERSITY OF UTAH RESEARCH FOUNDATION |
发明人 |
MENON, RAJESH |
分类号 |
G03F7/26;G03F7/20;H01L21/027 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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