发明名称 COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME
摘要 [Problem] To provide: a composition which is capable of forming a fine negative photoresist pattern that is free from defects such as rough surface, bridge defect and un-resolved pattern; and a pattern forming method using the composition. [Solution] A composition for forming a fine pattern, which is used for the purpose of miniaturizing a pattern by thickening a resist pattern in a method for forming a negative resist pattern using a chemically amplified resist composition, and which is characterized by containing a solvent and a polymer that has a structure represented by formula (A), (B) or (C) in a repeating unit. A fine pattern is formed by applying the composition to a negative photoresist pattern, which is obtained by development using an organic solvent developer, and heating the resulting negative photoresist pattern.
申请公布号 WO2013054803(A1) 申请公布日期 2013.04.18
申请号 WO2012JP76167 申请日期 2012.10.10
申请人 AZ ELECTRONIC MATERIALS IP (JAPAN) K.K.;AZ ELECTRONIC MATERIALS USA CORP.;OKAYASU TETSUO;SEKITO TAKASHI;ISHII MASAHIRO 发明人 OKAYASU TETSUO;SEKITO TAKASHI;ISHII MASAHIRO
分类号 G03F7/40;H01L21/027 主分类号 G03F7/40
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