发明名称 MULTI JUNCTIONS IN A SEMICONDUCTOR DEVICE FORMED BY DIFFERENT DEPOSITION TECHNIQUES
摘要 <p>A semiconductor device, in particular a solar cell (450) is formed on the basis of a hybrid deposition strategy using MOCVD and MBE in order to provide lattice matched semiconductor compounds (452, 453, 454). To this end, the MBE may be applied for providing a nitrogen-containing semiconductor compound (453) that allows a desired low band gap energy and a lattice matched configuration with respect to gallium arsenide substrates.</p>
申请公布号 WO2013054184(A1) 申请公布日期 2013.04.18
申请号 WO2012IB02062 申请日期 2012.10.08
申请人 SOITEC 发明人 KRAUSE, RAINER;GHYSELEN, BRUNO
分类号 H01L31/0687;H01L21/02;H01L21/203;H01L21/205;H01L31/0304;H01L31/0693;H01L31/18 主分类号 H01L31/0687
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