STRESS ENHANCED JUNCTION ENGINEERING FOR LATCHUP SCR

摘要

A method 200 of forming an IC device including a latchup silicon controlled rectifier (SCR) includes forming a mask on a top surface of a substrate 202, wherein the mask covers a first portion of the substrate and exposes a second portion of the substrate that is located in one of an n-well and a p-well on the substrate; etching the exposed second portion of the substrate to form an etched area 203; forming a stress engineered junction of the latchup SCR by selective epitaxial deposition in the etched area 204; and removing the mask 205.