| 摘要 |
<p>The present invention provides a semiconductor structure and a manufacturing method thereof. The method comprises the following steps: providing a substrate, and forming on the substrate a sacrifice gate, and a side wall and a source/drain region located at two sides of the sacrifice gate; forming an inter-layer dielectric layer covering the source/drain region, the sacrifice gate, and the side wall; removing the sacrifice gate to form a cavity in the side wall; forming in the cavity a first oxygen absorption layer contacting an inner wall of the side wall; forming in the remaining space of the cavity a second oxygen absorption layer, an oxygen absorption capability of the first oxygen absorption layer being lower than that of the second oxygen absorption layer; and performing annealing so as to form an interface layer on the surface of the substrate. Correspondingly, the present invention further provides a semiconductor structure. In the present invention, the symmetric interface layer is formed in the channel region, so that the process complexity is reduced while the short channel effect is effectively controlled and the carrier mobility is not reduced.</p> |
