发明名称 METHOD FOR ETCHING SUBSTRATE
摘要 <p>A method for etching a substrate includes etching at least one first layer of the substrate with a non-uniform substrate temperature and etching at least one second layer of the substrate with uniform substrate temperatures.</p>
申请公布号 WO2013055488(A1) 申请公布日期 2013.04.18
申请号 WO2012US55086 申请日期 2012.09.13
申请人 APPLIED MATERIALS, INC.;DOAN, KENNY, LINH;KIM, JONG, MUN 发明人 DOAN, KENNY, LINH;KIM, JONG, MUN
分类号 H01L21/3065 主分类号 H01L21/3065
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