| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a carbon-containing silicon oxide film by depositing an organosilicon compound with a predetermined structure with chemical vapor deposition (CVD), and to use the film as a sealing film. <P>SOLUTION: A film composed of a carbon-containing silicon oxide formed with CVD by using, as a starting material, an organosilicon compound having a secondary hydrocarbon group directly connected with at least one silicon atom, with the atomic ratio of oxygen atoms being 0.5 or less relative to 1 for silicon atoms, for example represented by general formula (1), is used as a sealing film in a gas barrier member, an FPD device, a semiconductor device or the like (wherein each of R<SP POS="POST">1</SP>and R<SP POS="POST">2</SP>represents a 1-20C hydrocarbon group, R<SP POS="POST">1</SP>and R<SP POS="POST">2</SP>are optionally bonded to each other so as to form a ring structure, and each of R<SP POS="POST">3</SP>and R<SP POS="POST">4</SP>represents a 1-20C hydrocarbon group or a hydrogen atom). <P>COPYRIGHT: (C)2013,JPO&INPIT |
