| 发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can improve electrical characteristics while minimizing the number of reviewing times of a process condition. <P>SOLUTION: A semiconductor device 1 comprises: an island-shaped insulation film 20 formed on an upper surface region of a semiconductor structure 11; a plurality of convex insulation parts 23 aligned on an upper surface region of the insulation film 20; and an inter layer insulation film 26 covering the convex insulation parts 23 and the insulation film 20. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013069845(A) |
申请公布日期 |
2013.04.18 |
| 申请号 |
JP20110207073 |
申请日期 |
2011.09.22 |
| 申请人 |
LAPIS SEMICONDUCTOR CO LTD |
发明人 |
IGARASHI SATORU;YONEKAWA KIYOTAKA;INOUE YASUKAZU |
| 分类号 |
H01L21/336;H01L21/321;H01L21/768;H01L23/532;H01L29/06;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
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