| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a MOS type solid-state imaging element capable of preventing deterioration of image quality due to crosstalk. <P>SOLUTION: A MOS type solid-state imaging element 100 includes: a plurality of photodiodes (PDs) 10 including an N-type impurity layer two-dimensionally arranged and formed in a semiconductor substrate; and a signal read circuit C formed in the semiconductor substrate, for reading a signal corresponding to electric charges generated in the respective PDs 10. In one of boundary regions between rows of the PDs 10 and boundary regions between columns of the PDs 10, MOS transistors constituting the signal read circuit C are arranged in a direction in which the one of the boundary regions extend. In regions between the PDs 10 in the other of the two boundary regions in the semiconductor substrate, there are formed charge storage portions 11 including an N-type impurity layer for generating electric charges corresponding to incident light to store the electric charges. <P>COPYRIGHT: (C)2013,JPO&INPIT |
