| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce dislocation density of a semiconductor crystal layer composed of a nitride semiconductor when forming the semiconductor crystal layer above a base substrate such as a silicon wafer. <P>SOLUTION: There is provided a manufacturing method of a semiconductor substrate which includes a base substrate, an adhesive layer, a buffer layer, and an active layer arranged in this order and in which an Si exists in a region where the base substrate touches the adhesive layer and the adhesive layer, the buffer layer, and the active layer are composed of a nitride semiconductor comprising the steps of: installing the base substrate in a cleaning room of a cleaning device and cleaning a surface of the base substrate with an HF aqueous solution (first cleaning step); and sequentially forming the adhesive layer, the buffer layer, and the active layer on the base substrate by an epitaxial growth method after installing the base substrate in a growth chamber of an epitaxial crystal growth device. <P>COPYRIGHT: (C)2013,JPO&INPIT |
