NITRIDE SEMICONDUCTOR GROWTH SUBSTRATE AND MANUFACTURING METHOD OF THE SAME, NITRIDE SEMICONDUCTOR EPITAXIAL SUBSTRATE AND NITRIDE SEMICONDUCTOR ELEMENT

摘要

A nitride semiconductor growth substrate includes a principal surface including a C-plane of a sapphire substrate, and a convex portion that is formed on the principal surface, has a cone or pyramid shape or a truncated cone or pyramid shape, is disposed to form a lattice pattern in a top view thereof, and includes a side surface inclined at an angle of less than 90 degrees relative to the principal surface. The convex portion has a height of 0.5 to 3 mum from the principal surface. A distance between adjacent ones of the convex portion is 1 to 6 mum. The side surface of the convex portion has a surface roughness (RMS) of not more than 10 nm.