发明名称 |
Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants |
摘要 |
A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a vacuum chamber gaseous reagents including at least one precursor selected from the group consisting of an organosilane and an organosiloxane, and a porogen that is distinct from the precursor, wherein the porogen is a C4 to C14 cyclic hydrocarbon compound having a non-branching structure and a degree of unsaturation equal to or less than 2; applying energy to the gaseous reagents in the vacuum chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film substantially all of the labile organic material to provide the porous film with pores and a dielectric constant less than 2.6.
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申请公布号 |
US2013095255(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201213439911 |
申请日期 |
2012.04.05 |
申请人 |
VRTIS RAYMOND NICHOLAS;O'NEILL MARK LEONARD;VINCENT JEAN LOUISE;LUKAS AARON SCOTT;HAAS MARY KATHRYN;AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
VRTIS RAYMOND NICHOLAS;O'NEILL MARK LEONARD;VINCENT JEAN LOUISE;LUKAS AARON SCOTT;HAAS MARY KATHRYN |
分类号 |
B05D1/00 |
主分类号 |
B05D1/00 |
代理机构 |
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地址 |
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