MULTI-BIT SPIN-MOMENTUM-TRANSFER MAGNETORESISTENCE RANDOM ACCESS MEMORY WITH SINGLE MAGNETIC-TUNNEL-JUNCTION STACK

摘要

A magneto resistive random access memory system includes a first magnetic-tunnel-junction device coupled to a first bit-line, a second magnetic-tunnel-junction device coupled to a second bit-line, a selection transistor coupled to the first and second bit- lines and a word-line coupled to the selection transistor.