发明名称 PATTERN FORMING METHOD, ACTINIC RAY SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern forming method excellent in exposure latitude (EL), uniformity in local pattern dimensions, rectangularity and circularity in a cross-sectional shape in a fine pattern formation such as a hole pattern with a pore diameter of 45 nm or smaller, and to provide an actinic ray sensitive or radiation sensitive resin composition used therefor, a resist film, a method for manufacturing an electronic device, and an electronic device. <P>SOLUTION: There is provided a pattern forming method comprising the steps of: (i) forming a film using an actinic ray sensitive or radiation sensitive resin composition including a resin (P) having a repeating unit (a) represented by the following general formula (I), a compound (B) that generates an organic acid by irradiation with an actinic ray or radiation, and a nitrogen-containing organic compound (NA) including a group to be eliminated by an action of an acid; (ii) exposing the film; and (iii) developing the exposed film using a developer containing an organic solvent to form a negative pattern. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013068777(A) 申请公布日期 2013.04.18
申请号 JP20110207017 申请日期 2011.09.22
申请人 FUJIFILM CORP 发明人 TAKAHASHI HIDETOMO;YAMAGUCHI SHUHEI;KATAOKA SHOHEI;SHIRAKAWA MICHIHIRO;YOSHINO FUMIHIRO;SAITO SHOICHI
分类号 G03F7/039;G03F7/004;G03F7/038;G03F7/32;H01L21/027 主分类号 G03F7/039
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