| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material having appropriate absorption to form a pattern on a highly reflective substrate with good pattern features, adhesiveness and embedding characteristics on a stepped substrate after exposure, and having ion implantation resistance when ion implantation is carried out, and to provide a patterning process. <P>SOLUTION: The positive resist material comprises: (A) a polymeric compound having a weight average molecular weight of 1,000 to 500,000 and including a repeating unit having a structure in which a hydrogen atom of a carboxyl group is substituted with an acid-labile group having a cyclic structure; (B) a novolac resin of a substituted or unsubstituted fluorescein as a base resin; and a photo-acid generator. <P>COPYRIGHT: (C)2013,JPO&INPIT |
