| 发明名称 |
SPUTTERING TARGET, TRANSISTOR, METHOD OF MANUFACTURING SINTERED BODY, METHOD OF MANUFACTURING TRANSISTOR, ELECTRONIC COMPONENT OR ELECTRIC APPARATUS, LIQUID CRYSTAL DISPLAY DEVICE, PANEL FOR ORGANIC EL DISPLAY, SOLAR CELL, SEMICONDUCTOR DEVICE, AND LIGHT-EMITTING DIODE DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target containing WS<SB POS="POST">2</SB>as a chief constituent. <P>SOLUTION: In an embodiment, a sputtering target contains at least one element selected from the group consisting of Hf, Re, Ta, W, Nb, Zr, V, Al, In, Sn, Ga, Zn, Si, Ge, Mn, Ni, Fe, Co, Cu, Ag, Y, Sc, Mg and Ca with the total content ranging from 0.1 to 10.0 wt.%, and the remainder is composed of WS<SB POS="POST">2</SB>and inevitable impurities. <P>COPYRIGHT: (C)2013,JPO&INPIT |
