| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an LDMOS transistor at low cost, which can reduce a reverse recovery time of a parasitic diode and reduce a switching loss. <P>SOLUTION: An LDMOS transistor T1 comprises: a p-type body region 2, a p-type buried diffusion region 3 and an n-type drift region 6 which are formed in a p-type semiconductor substrate 1; an n-type source contact region 4 and a p-type body contact region 5 which are formed in the body region 2; an n-type drain contact region 7 formed in the drift region 6; a gate insulation film 8 formed above the body region 2 between the source contact region 4 and the drift region 6; and a gate electrode 9 formed on the gate insulation film 8. The drift region 6 and the body region 2 contact each other. The buried diffusion region 3 extends at a position contacting a bottom face of the body region 2 and deeper than the body region 2 in a direction parallel with a surface of the semiconductor substrate 1 at least from the body region 2 to under a furthest end of the drain contact region 7 separated from the body region 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
