发明名称 FILM DEPOSITION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus that can improve in-plane uniformity of a film thickness of a deposited film, for instance. <P>SOLUTION: The film deposition apparatus for depositing a film on a substrate includes a stage, a shower head and a conductance adjustment wall. The stage is disposed inside a deposition chamber, has a substrate placed thereon and is operable to move upward and downward. The shower head has a planar width wider than that of the substrate, includes a plurality of holes in the surface thereof facing the stage and feeds a film deposition gas to a surface of the substrate through the plurality of holes. The conductance adjustment wall extends on a side of the stage from an outer edge of the shower head so as to adjust a gas conductance of the film deposition gas by the upward and downward movements of the stage on an outer side of the substrate. The shower head and the conductance adjustment wall are mutually integrated into one body. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013067844(A) 申请公布日期 2013.04.18
申请号 JP20110208635 申请日期 2011.09.26
申请人 TOSHIBA CORP 发明人 TAJI HIROKI;MATSUYAMA HIDETO
分类号 C23C16/455 主分类号 C23C16/455
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