| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of a silicon oxide containing film on a substrate at a temperature of 400°C or lower for preventing or limiting formation of OH bond between SiO2 film formation. <P>SOLUTION: The formation method of a silicon oxide containing film includes the steps a) for housing a substrate in a PECVD reaction chamber 11, b) for injecting at least one silicon containing compound, here a bis(diethylamino)silane, into the reaction chamber, c) for injecting at least one oxygen containing gas selected from a group consisting of ozone, oxygen, and/or moisture into the reaction chamber, d) for causing reaction of at least one silicon containing compound and at least one oxygen containing gas in the reaction chamber at a temperature lower than 400°C in order to obtain a silicon oxide containing film deposited on the substrate, and e) for repeating the steps b)-d) until a desired film thickness is obtained. <P>COPYRIGHT: (C)2013,JPO&INPIT |
