发明名称 |
LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF |
摘要 |
A light-emitting diode (LED) and fabricating method thereof. The method includes: providing a first substrate and forming an epitaxial portion on the first substrate; forming at least one reflection layer on the epitaxial portion; forming a metal barrier portion on the reflection layer; etching the epitaxial portion and the barrier portion by a first etching process, so as to form a plurality of epitaxial layers and a plurality of metal barrier layers, an etch channel is formed between adjacent epitaxial layers, and each metal barrier layer enwraps a corresponding reflection layer and covers all of a surface of a corresponding epitaxial layer; forming a first bonding layer on the metal barrier layer; and forming a second substrate on the first bonding layer and removing the first substrate.
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申请公布号 |
US2013092955(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201213403734 |
申请日期 |
2012.02.23 |
申请人 |
CHIOU SHIN-JIA;LIN CHUNG HSIN;WU CHI-LUNG;CHANG JUI-CHUN;CHI MEI LIGHTING TECHNOLOGY CORP. |
发明人 |
CHIOU SHIN-JIA;LIN CHUNG HSIN;WU CHI-LUNG;CHANG JUI-CHUN |
分类号 |
H01L33/06;H01L33/10;H01L33/32;H01L33/34 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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