| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a high-quality nitride semiconductor element, a high-quality nitride semiconductor wafer, and a high-quality nitride semiconductor layer that are formed on a silicon substrate and have reduced crack and dislocation. <P>SOLUTION: There is provided a nitride semiconductor element including a ground layer, a first stacked intermediate layer, and a function layer. The ground layer includes an AlN buffer layer formed on a substrate. The first stacked intermediate layer includes a first AlN intermediate layer provided on the ground layer, a first AlGaN intermediate layer provided on the first AlN intermediate layer, and a first GaN intermediate layer provided on the first AlGaN intermediate layer. The function layer is provided above the first stacked intermediate layer. The first AlGaN intermediate layer includes a first step layer that is in contact with the first AlN intermediate layer. The Al composition ratio of the first step layer gradually decreases in the stacking direction from the first AlN intermediate layer toward the first step layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
