| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize an information transfer rate over 2 Gbit/s in microwave assisted magnetic recording which is applied to a magnetic recording device having recording density over 1 Tbit/in<SP POS="POST">2</SP>. <P>SOLUTION: In structure comprising: a vertical free layer 1 having a magnetic anisotropy axis in a vertical direction to a film surface; and an in-plane free layer 2 consisting of a magnetic film having an easy magnetization surface effectively in the film surface, spin information is exchanged between both the free layers by applying current from the in-plane free layer 2 side to the vertical free layer 1 side, thereby, as a spin torque oscillation device for microwave assisted magnetic recording, the spin torque oscillation device, which becomes to a state that magnetization of both the free layers is substantially anti-parallel to each other and the device exhibits high-speed magnetization rotation along an interfacial boundary of both the free layers, is used. It is preferable that the vertical free layer 1 is made thinner than the in-plane free layer 2. It is preferable that a magnetic anisotropic magnetic field due to material of the vertical free layer nearly competes with an effective demagnetizing field in a vertical direction in an opposite direction. Further, it is more preferable that the vertical free layer is located at a main magnetic pole side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
