| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can appropriately silicide word lines or gate electrodes in both of a memory cell array and peripheral circuits. <P>SOLUTION: A semiconductor storage device comprises: a semiconductor substrate; a plurality of memory cells each including a floating gate provided above the semiconductor substrate, an inter-gate insulation film provided on the floating gate and a control gate provided on the inter-gate insulation film; and a peripheral circuit including a transistor having gate electrodes including a floating gate and a control gate electrically connected with each other, side wall films covering side faces of the floating gate of the gate electrode, and spacers covering side faces of the control gate of the gate electrode and provided on the side wall films. In the memory cell and the peripheral circuit, an upper part of the control gate is silicided. <P>COPYRIGHT: (C)2013,JPO&INPIT |
