MAGNETORESISTANCE EFFECT ELEMENT

摘要

PROBLEM TO BE SOLVED: To inhibit malfunction of a magnetic memory.

SOLUTION: A magnetoresistance effect element of an element comprises: a storage layer having perpendicular magnetic anisotropy and a variable magnetization direction; a reference layer having perpendicular magnetic anisotropy and an invariable magnetization direction; a non-magnetic layer 11 between the storage layer and the reference layer; and a shift adjustment layer having an invariable magnetization direction. The reference layer includes a first temperature dependence LM1 of magnetization and the shift adjustment layer includes a second temperature dependence LM2 of magnetization different from that of the reference layer. A leak field of the reference layer and a leak field of the shift adjustment layer are cancelled with each other under a memory operation temperature. A shift magnetic field caused by one of a leak field of the reference layer and a leak field of the shift adjustment layer is applied to magnetization of the storage layer under a mounting temperature.

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