| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which a voltage can be more freely set than conventional ones when a selected memory cell transistor is charged. <P>SOLUTION: In a nonvolatile semiconductor memory device 1, when a selected memory cell transistor 115 is charged, a high-voltage write prohibition voltage is applied to a P-type MOS transistor 9b, and a low-voltage write voltage is applied to an N-type MOS transistor 15a, thereby sharing a role to apply voltage to the selected memory cell transistor 115 or a non-selected memory cell transistor 116, into the P-type MOS transistor 9b and the N-type MOS transistor 15a. This enables individual adjustment of respective gate voltages and source voltages of the P-type MOS transistor 9b and the N-type MOS transistor 15a, and finally a voltage between gate substrates can be set to 4[V] or so, for example. <P>COPYRIGHT: (C)2013,JPO&INPIT |
