发明名称 |
NON-VOLATILE MEMORY AND MANUFACTURING METHOD THEREOF |
摘要 |
A non-volatile memory and a manufacturing method thereof are provided. A first oxide layer having a protrusion is formed on a substrate. A pair of doped regions is formed in the substrate at two sides of the protrusion. A pair of charge storage spacers is formed on the sidewalls of the protrusion. A second oxide layer is formed on the first oxide layer and the charge storage spacers. A conductive layer is formed on the second oxide layer.
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申请公布号 |
US2013092997(A1) |
申请公布日期 |
2013.04.18 |
申请号 |
US201113271517 |
申请日期 |
2011.10.12 |
申请人 |
CHENG CHIH-CHIEH;YAN SHIH-GUEI;CHENG CHENG-HSIEN;TSAI WEN-JER;MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
CHENG CHIH-CHIEH;YAN SHIH-GUEI;CHENG CHENG-HSIEN;TSAI WEN-JER |
分类号 |
H01L29/792;H01L21/336 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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